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| DMMT3906 MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features NEW PRODUCT * * * * * * * * * * * * Epitaxial Planar Die Construction Intrinsically Matched PNP Pair (Note 1) Small Surface Mount Package 2% hFE Matched Tolerance 1% hFE Matched Tolerance On Request Case: SOT-26, Molded Plastic Case Material - UL Flammability Rating Classification 94V-0 Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K3Q Weight: 0.015 grams (approx.) Ordering Information: See Below Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Power Dissipation (Note 2) Thermal Resistance, Junction to Ambient (Note 2) Operating and Storage and Temperature Range SOT-26 A C1 B1,2 C2 Dim A B BC Min 0.35 1.50 2.70 3/4 3/4 2.90 1.00 0.35 0.10 Max 0.50 1.70 3.00 3/4 3/4 3.10 1.30 0.55 0.20 Typ 0.38 1.60 2.80 0.95 0.55 3.00 0.05 1.10 0.40 0.15 Mechanical Data E1 NC C D F H J M E2 H K 0.013 0.10 K L M J D F L All Dimensions in mm Maximum Ratings @ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG DMMT3906 -40 -40 -5.0 -200 225 556 -55 to +150 Unit V V V mA mW C/W C Ordering Information Device DMMT3906-7 Notes: (Note 3) Packaging SOT-26 Shipping 3000/Tape & Reel 1. Built with adjacent die from a single wafer. 2. Device mounted on FR5 PCB: 1.0 x 0.75 x 0.62 in.; pad layout as shown on suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K3Q Date Code Key Year Code Month Code 1998 J Jan 1 Feb 2 1999 K March 3 2000 L Apr 4 K3Q = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September YM 2001 M May 5 2002 N 2003 O Aug 8 Sep 9 Oct O 2004 P Nov N Dec D Jun 6 Jul 7 DS30293 Rev. A-2 1 of 3 DMMT3906 Electrical Characteristics @ TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min -40 -40 -5.0 3/4 3/4 60 80 100 60 30 3/4 -0.65 3/4 3/4 3/4 2.0 0.1 100 3.0 250 3/4 3/4 3/4 3/4 3/4 Max 3/4 3/4 3/4 -50 -50 3/4 3/4 300 3/4 3/4 -0.25 -0.40 -0.85 -0.95 4.5 10 12 10 400 60 3/4 4.0 35 35 225 75 Unit V V V nA nA Test Condition IC = -10mA, IE = 0 IC = -1.0mA, IB = 0 IE = -10mA, IC = 0 VCE = -30V, VEB(OFF) = -3.0V VCE = -30V, VEB(OFF) = -3.0V IC = -100A, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -50mA, VCE = IC = -100mA, VCE = -1.0V -1.0V -1.0V -1.0V -1.0V NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain (Note 5) hFE 3/4 V V pF pF kW x 10-4 3/4 mS MHz dB ns ns ns ns Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time Notes: VCE(SAT) VBE(SAT) Cobo Cibo hie hre hfe hoe fT NF td tr ts tf IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA VCB = -5.0V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = -20V, IC = -10mA, f = 100MHz VCE = -5.0V, IC = -100mA, RS = 1.0kW, f = 1.0kHz VCC = -3.0V, IC = -10mA, VBE(off) = 0.5V, IB1 = -1.0mA VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA 4. Short duration test pulse used to minimize self-heating effect. 5. The DC current gain, hFE, is matched at IC = -10mA and VCE = -1.0V with typical matched tolerances of 1% and maximum of 2%. DS30293 Rev. A-2 2 of 3 DMMT3906 100 NEW PRODUCT 300 250 200 150 100 50 0 CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) 350 f = 1MHz PD, POWER DISSIPATION (mW) 10 Cibo 0 25 50 75 100 125 150 175 200 1 0.1 Cobo 1 10 100 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage 1000 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE 10 IC IB = 10 hFE, DC CURRENT GAIN TA = 125C 1 100 TA = -25C TA = +25C 10 0.1 VCE = 1.0V 1 0.1 0.01 1 10 100 1000 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.0 VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE 0.9 0.8 0.7 0.6 IC IB = 10 0.5 1 10 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current 100 DS30293 Rev. A-2 3 of 3 DMMT3906 |
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